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IRF510

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.

Pricing

Quantity Price
1 - 10 $0.538
11 - 50 $0.511
51 - 100 $0.485
101 - 500 $0.461
501 - 1,000 $0.438
1,001 - 2,500 $0.416
2,501 - 4,999 $0.395
5,000+ $0.376

Description

Power Field-Effect Transistors/Transistors

Part Number: IRF510
DERF ID #: 35610
Manufacturer: HARRIS

VOLTAGE: 100V
AMPS: 5.6A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB


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