Description
Power Field-Effect Transistors/Transistors
Part Number: IRF710
DERF ID #: 46760
Manufacturer: SAMSUNG
VOLTAGE: 400V
AMPS: 2A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.
Quantity | Price |
---|---|
1 - 10 | $0.499 |
11 - 50 | $0.474 |
51 - 100 | $0.45 |
101 - 500 | $0.427 |
501 - 1,000 | $0.406 |
1,001 - 2,500 | $0.386 |
2,501 - 4,999 | $0.367 |
5,000+ | $0.348 |
Power Field-Effect Transistors/Transistors
Part Number: IRF710
DERF ID #: 46760
Manufacturer: SAMSUNG
VOLTAGE: 400V
AMPS: 2A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB