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IRFBE30L

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.

Pricing

Quantity Price
1 - 10 $2.414
11 - 50 $2.293
51 - 100 $2.178
101 - 500 $2.07
501 - 1,000 $1.966
1,001 - 2,500 $1.868
2,501 - 4,999 $1.774
5,000+ $1.686

Description

Power Field-Effect Transistors/Transistors

Part Number: IRFBE30L
DERF ID #: 91808
Manufacturer: INTERNATIONAL RECTIFIER

VOLTAGE: 800V
AMPS: 4.1A I(D)
CHANNEL: N-Channel
PACKAGE: TO-262AA


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